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High Temperature Stability of Amorphous TaxCu1-x Diffusion Barriers on GaAs+

Published online by Cambridge University Press:  26 February 2011

J. E. Oh
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588–0511
J. J. Pouch
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
D. C. Ingram
Affiliation:
Universal Energy Systems, Dayton, OH 45432
S. A. Alterovitz
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
J. A. Woollam
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588–0511
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Abstract

The x value of the most thermally stable co-sputtered TaxCu1-x alloy films are found to correlate with measured maximum temperature coefficients of resistance as a function of alloy composition. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealing and infrared rapid thermal annealing are made over a wide temperature range. Resistivity changes, X-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering measurements are performed to find the metallurgical stabilities of these materials at elevated temperatures.

For high x values, the reaction temperature for TaxCu1-x, in contact with GaAs lies between 500 and 700°C. For Au in contact with TaxCu1-x the TaxCu1-x/GaAs reaction occurs at about 600°C. Amorphous Ta93Cu7 exhibits uniform mixing with surrounding elements, whereas Ta80Cu20 exhibits phase separation.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

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Footnotes

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Supported by NASA Lewis Research Center Grant NAG-3–154.

References

REFERENCES

1. Todd, A.G., Harris, P.G., Scobey, I.H., and Kelly, M.J., Solid State Electronics 27 (6), 507 (1984).CrossRefGoogle Scholar
2. Nagel, S.R. and Taue, J., Phys. Rev. Lett. J35, 380 (1975).Google Scholar
3. Nastasi, M., Saris, F.W., Hung, L.S., and Mayer, J.W., J. Appl. Phys. 58 (8), 3052 (1985).CrossRefGoogle Scholar
4. Oh, J.E., Woollam, J.A., Aylesworth, K.D., Sellmyer, D.J., and Pouch, J.J., J. Appl. Phys., in pressGoogle Scholar
5. Lahav, A. and Eizenberg, M., Appl. Phys. Lett. 45 (3), 256 (1984).Google Scholar
6. Okumura, T. and Tu, K.N, Appl. Phys. Lett. 47(1), 42 (1985).Google Scholar
7. Hung, L.S., Wang, S.Q., Mayer, J.W., and Saris, F.W., in Thin Films-Interfaces and Phenomena, edited by Nemanich, R.J., Ho, P.S., and Lau, S.S., (North-Holland, New York), 81 (1986).Google Scholar
8. Oh, J.E., Woollam, J.A., Pouch, J.J., Alterovitz, S.A., and Ingram, D.C., submitted to J. Vac. Sci. Technol.Google Scholar