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High Temperature Gas Phases Reactions Of Trimethylgallium with Ammonia and Trimethylamine

Published online by Cambridge University Press:  15 February 2011

A. Thon ,
S. A. Safvi  and
T. F. Kuech
A. Thon
Affiliation:
Department of Chemical Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706.
S. A. Safvi
Affiliation:
Department of Chemical Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706.
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, WI 53706.
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Abstract

The use of trimethylgallium-trimethylamine (TMG:TMN) adduct as alternative cation precursor for MOVPE of GaN was studied by means of in-situ mass spectroscopy in an isothermal flow tube reactor. The temperature, pressure and reaction time were chosen to emulate the gas phase environment typical of the metal-organic vapor phase: epitaxy (MOVPE) of GaN. Dynamic changes in the mass spectra are reported for the gas phase reactions between trimethylgallium (TMG) and TMN in hydrogen (H2/D2) and ammonia (NH3/ND3) ambients. Evidence presented for the high temperature TMG:TMN adduct formation, followed by ethane elimination. The strength of the adduct bonding is comparable to that of TMG:NH3 and thus suppresses TMN displacement by ammonia. The thermal stability of TMG:TMN was found to be higher in ammonia ambient than it is in hydrogen. Kinetic parameters for some of the decomposition processes are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 445
Copyright
Copyright © Materials Research Society 1996

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