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High Strength Low Dielectric Constant Aromatic Thermosets

Published online by Cambridge University Press:  01 February 2011

Yongqing Huang  and
James Economy
Yongqing Huang
Affiliation:
Materials Science and Engineering Dept., Univ. of Illinois at Urbana-Champaign, 1304 West Green St., Urbana, IL 61801, U.S.A.
James Economy
Affiliation:
Materials Science and Engineering Dept., Univ. of Illinois at Urbana-Champaign, 1304 West Green St., Urbana, IL 61801, U.S.A.
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Abstract

Continuing miniaturization of microelectronic devices requires development of low dielectric constant materials to lower the RC delay, power dissipation and crosstalk noise. Although spin-on polymer dielectrics usually have better potential for extendibility to lower dielectric constant (k) values compared to chemical-vapor-deposited dielectrics, their low mechanical properties prevent them from being successfully integrated with copper metal lines.

Recent evaluation of a new thermosetting oligomer shows high thermal stability, low moisture pick-up and low dielectric constant. Techniques to optimize the solubility and spin coating characteristics of the oligomer have been developed. The thermally cured polymer displayed a thermal stability up to 480°C in nitrogen and 400°C in air. The cured polymer displayed a dielectric constant of 2.7 at 1 MHz and a breakdown strength larger than 230 V/μm. Nanoindentation testing showed that it had an extraordinarily high Young's modulus of 16.8 GPa and a hardness of 3.5 GPa. By use of porogens, a dielectric constant as low as 1.85 was obtained while still maintaining an acceptable high Young's modulus of 7.7 GPa and hardness of 2.0 GPa. Nanoscratch testing indicated that this material had good adhesion to the Si substrate, and Ta which is a diffusion barrier for copper. These results appear unique compared to all commercially available low-k candidates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B3.11
Copyright
Copyright © Materials Research Society 2005

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References

1. Peercy, P.S., Nature 406(6799), 1023–1026 (2000).Google Scholar
2. “International SEMATECH Demonstrates Ultra Low-k Material for Dual Damascene” in www.sematech.org/corporate/news, November 19 (2003).Google Scholar
3. International Technology Roadmap for Semiconductor (2003 edition), www.public.itrs.netGoogle Scholar
4. Morgan, M., Ryan, E.T., Zhao, J.-H., Hu, C., Cho, T. and Ho, P.S., Annu. Rev. Mater. Sci. 30, 645 (2000).Google Scholar
5. Martin, S.J., Godschalx, J.P., Mills, M.E., Shaffer, E.O. II and Townsend, P.H., Adv. Mater. 12(23), 1769–1778 (2000).Google Scholar
6. Lammers, D., EE Times, April 21, (2003).Google Scholar
7. Dawson, D.J., Fleming, W.W., Lyerla, J.R. and Economy, J. “Thermally Stable Polymers for Electronic Applications”, Reactive Oligomers (ACS Symposium Series 282, 1985) pp.63–79.Google Scholar
8. Miller, T.M., Kwock, E.W., Baird, T. Jr and Hale, A., Chem. Mater. 6, 1569–1574 (1994).Google Scholar
9. Kwock, E.W., Baird, T. Jr and Miller, T.M., Macromolecules 26(11), 2935–2940 (1993).Google Scholar
10. Oliver, W.C. and Pharr, G.M., J. Mater. Res. 7, 1564–1583 (1992).Google Scholar