Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-06T12:51:53.266Z Has data issue: false hasContentIssue false
  • English
  • Français

High Spatial Resolution Tem Study of Thin Film Metal/6H-Sic Interfaces

Published online by Cambridge University Press:  25 February 2011

J. S. Bow ,
L. M. Porter ,
M. J. Kim ,
R. W. Carpenter  and
R. F. Davis
J. S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
L. M. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
M. J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
Get access

Abstract

Thin films of titanium, platinum, and hafnium were deposited on single crystal n-type, (0001) 6H-SiC at room temperature in UHV. Microstructure and chemistry of their interfaces were analyzed by high spatial resolution TEM imaging and spectroscopy. Ti5Si3 and TiC were the two phases found in the reaction zone of Ti/SiC specimens annealed at 700°C. A carbon-containing amorphous layer formed between Pt and SiC when the annealing temperature went up to 750°C. There was no apparent reaction zone in Hf/SiC specimens annealed at 700°C for 60 min‥ The change of electrical properties of metal/6H-SiC devices was attributed to these new product phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 571
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Porter, L.M., Glass, R.C., Davis, R.F., Bow, J.S., Kim, M.J., and Carpenter, R. W., Mat. Res. Soc. Symp. Proc. (1992), to be published.Google Scholar
2. Nathan, M. and Ahearn, S., Mat. Sci. Eng., A126, 225 (1990).CrossRefGoogle Scholar
3. Backhaus-Ricoult, M., in Metal-Ceramic Interfaces p 79, Acta-Scripta Metallurgica Proceeding Series vol. 4 (1989).Google Scholar
4. Taubenblatt, M.A. and Helms, C.R., J. Appl. Phys., 59[6], 1992 (1986).Google Scholar
5. Yano, T., Suematsu, H., and Iseki, T.., J. Mat. Sci., 23, 3362 (1988).CrossRefGoogle Scholar
6. Choi, S.K., Chandraselaran, M., and Brabers, M.J.., J. Mat. Sci., 25, 1957(1990).CrossRefGoogle Scholar
7. Weiss, J.K., Rez, P. and Higgs, A.A., Ultramicropscopy 41, 291 (1992).Google Scholar
8. Bow, J.S., Spellman, L.M., Kim, M.J., Carpenter, R.W., and Davis, R.F., EMSA Proc, 252 (1992).Google Scholar
9. JCPDS-ICDD card 27–907.Google Scholar