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High Room-Temperature Hole Concentrations above 1019 cm−3 in Mg-Doped InGaN/GaN Superlattices

Published online by Cambridge University Press:  15 March 2011

Kazuhide Kumakura ,
Toshiki Makimoto  and
Naoki Kobayashi
Kazuhide Kumakura
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Toshiki Makimoto
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Naoki Kobayashi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Abstract

We achieved high hole concentrations above 1019 cm−3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN/GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 Å 1019 cm−3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices strongly depend on the structural parameters of the superlattices. The band bending due to the strain-induced piezoelectric field and the valence band structures of the InGaN/GaN heterostructures affect the hole generation in the superlattices. The weak temperature dependence of the resistivities for the InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T5.11.1
Copyright
Copyright © Materials Research Society 2000

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References

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