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High Resolution X-Ray Studies of Ga1–xInxAs Epilayers on GaAs Substrates

Published online by Cambridge University Press:  22 February 2011

Yushan Shi  and
Mark Sutton
Yushan Shi
Affiliation:
Center for the Physics of Materials and Department of Physics, McGill University, 3600, University Street, Montreal, Québec, Canada H3A 2T8
Mark Sutton
Affiliation:
Center for the Physics of Materials and Department of Physics, McGill University, 3600, University Street, Montreal, Québec, Canada H3A 2T8
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Abstract

By using the techniques of normal Bragg scattering and glancing incidence scattering, we have measured both the out-of-plane and in-plane structures of GaixInxAs epilay-ers grown on GaAs (001) face by MOVPE. The data presented in this paper were collected from two samples: a thick epilayer of 40, 000A Ga0.84In0.16As, and a thin epilayer of 500Å Ga0.84In0.19As, which are lattice-mismatched with the substrate by about 1.14% and 1.36% respectively according to the Vegard's law. The measured average lattice constants of the thick epilayer agree with the expectation both out-of-plane and in-plane and show nearly complete structural relaxation. An uniaxial in-plane modulation in the thick epilayer has been observed. The out-of-plane and in-plane data of the thin epilayer demonstrate a tetragonal distortion of the lattice, and the Poisson's ratio is calculated to be 0.36. The averaged in-plane lattice constant is still 0.18% larger than that of the substrate, which results in a complex structure at the epitaxial interface. An in-plane misalignment along one (110) axis in the thin epilayer has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 461
Copyright
Copyright © Materials Research Society 1992

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References

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