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High Resolution X-Ray Reflectometry and Diffraction of CaF2/Si(111) Structures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

E. Abramof ,
S. O. Ferreira ,
P. H. O Rappl ,
A. Y. Ueta ,
C. Boschetti ,
H. Closs ,
P. Motisuke  and
I. N. Bandeira
E. Abramof
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
S. O. Ferreira
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
P. H. O Rappl
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
A. Y. Ueta
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
C. Boschetti
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
H. Closs
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
P. Motisuke
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
I. N. Bandeira
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
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Abstract

CaF2 layers were grown by molecular beam epitaxy on differently prepared Si(111) substrates. X-ray reflectivity spectra were measured and fitted. From the fitting process, the thickness of the CaF2 layer was precisely (within 1 Å) determined and the CaF2/Si interface roughness was also obtained. This roughness was used as an evaluation parameter for the quality of the layers. The CaF2/Si sample from which the intentional oxide was desorpted at 800°C inside the growth chamber exhibited the most clear x-ray reflectivity spectrum with very well resolved interference fringes. The epitaxial relations of the CaF2/Si samples grown at temperatures between 250 and 700°C were determined from x-ray diffraction analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 661
Copyright
Copyright © Materials Research Society 1998

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References

1 Zogg, H., Fach, A., Maissen, C., Masek, J., and Blunier, S.. Opt. Eng. (Bellingham) 33, 1440 (1994).10.1117/12.165808Google Scholar
2 Boschetti, C., Rapp], P.H.O., Ueta, A.Y., and Bandeira, I. N.. Infrared Phys. 34, 281 (1993).Google Scholar
3 Zogg, H., Fach, A., John, J., Masek, J., MUller, P., Paglino, C., and Buttler, W.. J. Electron. Materials 25, 1366 (1996).10.1007/BF02655035Google Scholar
4 Hashimoto, S., Peng, J.-L., Gibson, W.M., Schowalter, L.J., and Fathauer, R.W.. Appl. Phys. Lett. 47, 1071 (1985)Google Scholar
5 Zogg, H., Blunier, S., Fach, A., Maissen, C., Müller, P., Teodoropol, S., Meyr, V., Kostorz, G., Dommann, A., and Richmond, T.. Phys. Rev. B 50, 10801 (1994).10.1103/PhysRevB.50.10801Google Scholar
6 Blunier, S., Zogg, H., Maissen, C., Tiwari, A.N., Overney, R.M., Haefke, H., Buffat, P.A., and Kostorz, G.. Phys. Rev. Lett. 68, 3599 (1992)10.1103/PhysRevLett.68.3599Google Scholar
7 Cho, C.C., Liu, H Y., Gnade, B.E., and Kim, T.S.. J. Vac. Sci. Technol. A 10, 769 (1992)Google Scholar