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High Resolution Photoluminescence of EDGE and Near-Edge CdTe

Published online by Cambridge University Press:  25 February 2011

M. C. Carmo  and
M. J. Soares
M. C. Carmo
Affiliation:
University of Aveiro, Physics Department, 3800 Aveiro, Portugal
M. J. Soares
Affiliation:
University of Aveiro, Physics Department, 3800 Aveiro, Portugal
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Abstract

Among II-VI semiconductors CdTe is the one that can be grown in better crystal quality. However most of the edge and near edge luminescence properties are still to be clarified. CdTe can be obtained in both n and p type and conductivity type conversion is obtained under heat treatment.

In this work we studied the behaviour of a batch of CdTe samples under annealing in different conditions. We observed the growth and destruction of the 1.47 eV band and separated the 1.47 eV and 1.43 eV bands. We also show that these bands are strongly related with the chemical stoi chiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 287
Copyright
Copyright © Materials Research Society 1992

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References

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