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High Resolution Electron Microscopy of Grain Boundaries in Silicon

Published online by Cambridge University Press:  15 February 2011

B. Cunningham  and
D. Ast
B. Cunningham
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY, 14853, USA.
D. Ast
Affiliation:
Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, NY, 14853, USA.
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Abstract

The lattice imaging technique has been used to study grain boundaries in annealed, chemically vapor deposited (CVD) silicon. The majority of the grain boundaries are Σ*=3, 9 or 27, i.e. they are all twin related, and have boundary planes which coincide with high density planes of the appropriate coincidence site lattice (CSL). Asymmetric Σ=27 boundaries are found to be dissociated on an atomic scale into faceted Σ=3 boundaries and Σ=9 boundaries. No dissociation of the Σ=27 boundaries is observed when the boundary planes are symmetric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 21
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1) Bourret, A. and Desseaux, J., Phil.Mag., A39, 405 (1979)CrossRefGoogle Scholar
2) Carter, C. B., Rose, J. and Ast, D. G., Proc. 39th EMSA (1981)Google Scholar
3) d'Anterroches, C., Silvestre, G., Papon, A. M., Bacmann, J. J. and Bourret, A. Elec. Microsc. 1, 316 (1980)Google Scholar
4) Krivanek, O. L., Isoda, S. and Kobayashi, K. Phil.Mag. 36, 331 (1977)CrossRefGoogle Scholar
5) Schober, T. and Balluffi, R. W. Phil.Mag. 21, 109 (1970)CrossRefGoogle Scholar
6) Ichinose, H. and Ishida, Y., Phil.Mag, A43, 1253 (1981)CrossRefGoogle Scholar
7) Vitek, V., Sutton, A. P., Smith, D. A. and Pond, R. C. in Grain Boundary Structure and Kinetics, American Society for Metals, p.115 (1980)Google Scholar
8) Hornstra, J. Physica, 25, 409, (1959)CrossRefGoogle Scholar
9) Hirsch, P. B., de, J. Physique, C6, 27 (1979)Google Scholar
10) Brodsky, M. H., Kirkpatrick, S and Waire, D. in Tetrahedrally Bonded Amorphous Semiconductors, A.I.P. Conf.Proceed. No. 20(1974).Google Scholar
11) Goodhew, P. J., Tan, T. Y. and Balluffi, R. W., Acta Met., 26, 557 (1978)CrossRefGoogle Scholar
12) Pond, R. C. and Vitek, V. Proc. Roy. Soc., B357, 453 (1977)Google Scholar
13) Brokman, A., Bristowe, P. D. and Balluffi, R. W. Scripta Met., 15, 201(1981)CrossRefGoogle Scholar
14) Goodhew, P. J. in 9th Int. Congress on Electr. Micros., Toronto, 1 p.410 (1978)Google Scholar
15) Vaughan, D. Phil. Mag., 22, 1003 (1970)CrossRefGoogle Scholar