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High Resistivity Oxygen-Doped AlGaAs For Power Devices

Published online by Cambridge University Press:  10 February 2011

Yuichj Sasajima ,
Noboru Fukuhara ,
Masahiko Hata ,
Takayoshi Maeda  and
Hideyo Okushi
Yuichj Sasajima
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, lbaraki 300-32, Japan
Noboru Fukuhara
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, lbaraki 300-32, Japan
Masahiko Hata
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, lbaraki 300-32, Japan
Takayoshi Maeda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, lbaraki 300-32, Japan
Hideyo Okushi
Affiliation:
Electrotechnical Laboratory (ETL), 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Abstract

We have succeeded in making high resistive AlxGa1−xAs by oxygen doping (AlxGa1−xAs:O) and applying them to buffer layer for power metal-semiconductor field effect transistor (MESFET). Samples of Al0.3Ga0.7As:O were prepared by metalorganic vapor phase epitaxy (MOVPE). Oxygen-related levels in A10.3Ga0.7As:O were investigated by applying isothermal capacitance transient spectroscopy (107S) to MIS (Al/Al0.3Ga0.7As:O/n-GaAs) diodes. A breakdown voltage and a two terminal gate breakdown voltage of the MESFET with the Al0.3Ga0.7As:O buffer layer became higher as increasing in the intensity of oxygen related peak in the ICTS spectra. These results indicate that the electrically active oxygen in the Al1−xGa1−xAs:O is an important factor for the device characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 425
Copyright
Copyright © Materials Research Society 1998

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