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High Resistivity GaSb and GaAs Produced by MBE Growth at Elevated Temperatures

Published online by Cambridge University Press:  03 September 2012

A. Y. Polyakov ,
A. G. Milnes ,
M. Stam ,
R. G. Wilson ,
Z. Q. Fang ,
P. Rai-Choudhury  and
R. J. Hillard
A. Y. Polyakov
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213–3890, USA
A. G. Milnes
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213–3890, USA
M. Stam
Affiliation:
ECE Department, Carnegie Mellon University, Pittsburgh, PA 15213–3890, USA
R. G. Wilson
Affiliation:
Hughes Research Laboratories, 250MS RL56. 3011 Malibu Canyon Rd., Malibu, CA 90265., USA
Z. Q. Fang
Affiliation:
Wright State University, Dayton, OH 45435., USA
P. Rai-Choudhury
Affiliation:
Solid State Measurements, Inc, 110 Technology Drive, Pittsburgh, PA 15275, USA
R. J. Hillard
Affiliation:
Solid State Measurements, Inc, 110 Technology Drive, Pittsburgh, PA 15275, USA
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Abstract

In this paper we show that when grown by MBE at unusually high temperatures epitaxial layers of GaSb and GaAs are semi-insulating. In GaSb combination of Hall effect, TSC, SIMS and two probe resistivity profiling leads us to believe that high resistivity is due to production of midgap centers at elevated temperatures. No strong evidence of the prevalence of such midgap centers was obtained for high temperature GaAs layers and in this case we believe that high resistivity is associated with the formation of Ga-related precipitates acting as internal Schottky barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 157
Copyright
Copyright © Materials Research Society 1992

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References

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