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High Rate Deposition of Hydrogenated Amorphous Silicon Films by ECR Plasma CVD

Published online by Cambridge University Press:  21 February 2011

S. Ozaki ,
T. Akahori ,
T. Tani  and
S. Nakayama
S. Ozaki
Affiliation:
Research and Development Division, Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd., 1-3, Nishinagasu-hondori, Amagasaki, Hyogo 660, Japan
T. Akahori
Affiliation:
Research and Development Division, Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd., 1-3, Nishinagasu-hondori, Amagasaki, Hyogo 660, Japan
T. Tani
Affiliation:
Research and Development Division, Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd., 1-3, Nishinagasu-hondori, Amagasaki, Hyogo 660, Japan
S. Nakayama
Affiliation:
Research and Development Division, Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd., 1-3, Nishinagasu-hondori, Amagasaki, Hyogo 660, Japan
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Abstract

A new electron cyclotron resonance (ECR) plasma CVD system has been developed in order to obtain high deposition rates. By using this system, hydrogenated amorphous silicon (a-Si:H) films have been prepared at a deposition rate of 1.0. μ m/min. The utilization efficiency of SiH4 gas is 16% under such conditions. Films prepared at 1.0 μ m/min have high photoconductivity (σ ph) of 10-6 S/cm and low dark conductivity (σ d) of 10-12 S/cm, leading to a high photosensitivity of σ ph/σ d=106. Both high microwave power and high SiH4 gas flow rates are essential to the high rate deposition of sufficiently photosensitive a-Si:H films. Annealing at 300° C improves the photosensitivity up to σ ph/σ d=107.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 161
Copyright
Copyright © Materials Research Society 1990

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