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High Quality Epitaxial Films of ZnSe and ZnSe/ZnS Strained Layer Superlattices Grown by MOCVD

Published online by Cambridge University Press:  25 February 2011

Chungdee Pong ,
R. C. DeMattei  and
R. S. Feigelson
Chungdee Pong
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
R. C. DeMattei
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
R. S. Feigelson
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
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Abstract

High quality epitaxial films of ZnSe and ZnSe/ZnS strained layer superlattices (SLS) have been grown on (100) GaAs substrates using diethylZinc, dimethylSelenide, diethylSelenide, and propyleneSulfide as reagents in both atmospheric and low pressure environment. This source combination produces the results showing the influence of process conditions, such as reagent flow ratio (fv1/f11) and substrate temperature, on the film stoichiometry, surface morphology, and crystalline quality. Low temperature photoluminescence (PL), Rutherford backscattering spectrometry (RBS), cross-sectional TEM, and x-ray diffraction have been used to characterize the films. Photoluminescence studies at 2.8 K on samples of ZnSe/ZnS strained layer superlattices; 10 periods ZnSe(1.5 nm)/ZnS(8.5 nm), have shown quantum size effect with the peak energy blue-shifted to 3.03 eV with the FWHM=73 meV. Atomic force microscopy (AFM) was applied to study surface morphology of multilayer samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 293
Copyright
Copyright © Materials Research Society 1992

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References

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