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High Quality Deposition of Strontium Titanate (STO) Thin Films using Sol-Gel Method

Published online by Cambridge University Press:  01 February 2011

Kiyoshi Uchiyama ,
Daiki Fukunaga  and
Tadashi Shiosaki
Kiyoshi Uchiyama
Affiliation:
[email protected], Nara Institute of Science and Technology, Graduate School of Materials Science, Takayama-cho 8916-5, Ikoma, 630-0192, Japan, +81-743-72-6061, +81-743-72-6069
Daiki Fukunaga
Affiliation:
[email protected], Nara Institute of Science and Technology, Graduate School of Materials Science, Takayama-cho 8916 -5, Ikoma, Nara 630-0192, Japan
Tadashi Shiosaki
Affiliation:
[email protected], Nara Institute of Science and Technology, Graduate School of Materials Science, Takayama-cho 8916-5, Ikoma, Nara 630-0192, Japan
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Abstract

Highly oriented strontium titanate (STO) thin films were successfully deposited on sapphire substrates using a sol-gel method. Sintering temperature of 1400°C and the use of c-cut sapphire for the substrates are the keys to obtain highly oriented thin films. The sample obtained on c-cut sapphire with a sintering temperature of 1400°C showed quite high (111)-orientation and a narrow full width half maximum (FWHM) value of 0.265°, which indicates a high quality deposition of the STO thin films.

We believe this high quality STO deposition technique will bring a new scope of oxide material applications for future electronic devices.

Keywords

thin filmoxidesol-gel
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-23
Copyright
Copyright © Materials Research Society 2008

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