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High Planarization Efficiency and Wide Process Window Using Electro-chemical Mechanical Planarization (EcmpTM)

Published online by Cambridge University Press:  01 February 2011

Feng Q Liu ,
Liang Chen ,
Alain Duboust ,
Stan Tsai ,
Antoine Manens ,
Yan Wang  and
Wei-Yung Hsu
Feng Q Liu
Affiliation:
Thin Films Group, Applied Materials, Inc. 3050 Bowers Ave., P. O. Box 58039, Santa Clara, CA 95054, USAContact:, [email protected]
Liang Chen
Affiliation:
Thin Films Group, Applied Materials, Inc. 3050 Bowers Ave., P. O. Box 58039, Santa Clara, CA 95054, USAContact:, [email protected]
Alain Duboust
Affiliation:
Thin Films Group, Applied Materials, Inc. 3050 Bowers Ave., P. O. Box 58039, Santa Clara, CA 95054, USAContact:, [email protected]
Stan Tsai
Affiliation:
Thin Films Group, Applied Materials, Inc. 3050 Bowers Ave., P. O. Box 58039, Santa Clara, CA 95054, USAContact:, [email protected]
Antoine Manens
Affiliation:
Thin Films Group, Applied Materials, Inc. 3050 Bowers Ave., P. O. Box 58039, Santa Clara, CA 95054, USAContact:, [email protected]
Yan Wang
Affiliation:
Thin Films Group, Applied Materials, Inc. 3050 Bowers Ave., P. O. Box 58039, Santa Clara, CA 95054, USAContact:, [email protected]
Wei-Yung Hsu
Affiliation:
Thin Films Group, Applied Materials, Inc. 3050 Bowers Ave., P. O. Box 58039, Santa Clara, CA 95054, USAContact:, [email protected]
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Abstract

EcmpTM is a revolutionary planarization technology uniquely combining removal rate controlled by charge with superior planarization efficiency in the near no shear regime. In addition, the electrochemical removal mechanism has excellent within-wafer profile control. Multiple electrical zones configuration combined with a precise end-point control by electric charge, make it more predictable to control the remaining thickness and profile of copper film. The factors affecting the planarization such as the concentration and the efficiency of the inhibitors will be discussed in this paper. Meanwhile a planarization mechanism for Ecmp will be proposed to match the high planarization efficiency. The effects of applied voltage on removal rate and planarization efficiency will be presented in this paper. The electrical feature allows Ecmp to be a planarization process with removal rate independent of down force, enabling a wide removal rate window based on applied voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W9.1
Copyright
Copyright © Materials Research Society 2005

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