Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T18:03:09.799Z Has data issue: false hasContentIssue false
  • English
  • Français

High Performances of Low Temperature (≤ 600°C) Unhydrogenated Polysilicon Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

L. Pichon ,
F. Raoult ,
K. Mourgues  and
O. Bonnaud
L. Pichon
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
F. Raoult
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
K. Mourgues
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
O. Bonnaud
Affiliation:
Groupe de Microélectronique et Visualisation, URA au CNRS 1648, Université de RENNES I, Campus de Beaulieu, 35 042 RENNES.
Get access

Abstract

Low temperature unhydrogenated polysilicon thin film transistors are elaborated through a fourmask gate aluminium process. Temperature process does not exceed 600°C. Active layer is made of undoped polysilicon layer, an in-situ phosphorus polysilicon layer constitutes source and drain windows and a SiO2 APCVD layer ensures gate insulation. The transistors exhibit electrical properties as good as in the case of hydrogenated ones: a low threshold voltage (VT = 4–5 V), an acceptable optimum field effect mobility (≅ 42 cm2/Vs), a high On/Off state switching, and a high On/Off state current ratio (≅ 107) for a drain voltage equal to 1 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 417
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mimura, A., Konishi, N., Ono, K., Ohwada, J. I., Hosokawa, Y., Ono, Y. A., Suzuki, T., Mijata, K., and Kawakami, H., IEEE Trans Electron devices ED–36, p 351 (1989).Google Scholar
2. Duhamel, N. and Loisel, B., Polycrystalline Semiconductors III-Physics and Technology, edited by H. P. Strunk, J. H. Werner, B. Fortin, and O. Bonnaud. (Trans Tech, Zurich. Solid State Phenomena) 37–38, p 535 (1994).Google Scholar
3. Pichon, L., Raoult, F., Bonnaud, O., Materials Chemistry and Physics 39, p 313 (1995).Google Scholar
4. Pichon, L., Raoult, F., Bonnaud, O., Pinel, J., and Sarret, M., IEEE Elect. Dev. Lett. EDL–16, p376 (1995).Google Scholar
5. Nakazawa, K., Tanaka, K., Suyama, S., Kato, K.; Khoda, S., SID 90. Digest, p 311 (1990).Google Scholar
6. Lakani, Amir. A., Solid-state Electron. 27, p 921 (1984).Google Scholar
7. Suyama, S., Okamoto, A., Serikawa, T., J. Electrochem. Soc. 134, p 2260 (1987).Google Scholar
8. Suyama, S., Okamoto, A., Serikawa, T., IEEE Trans. Electron Devices ED–34, p 2124 (1987).Google Scholar
9. Wu, I. Wei., Lewis, A. G., Huang, T-Y., Chiang, A., IEEE Elect. Dev. Lett. EDL–10, p 123, (1989).Google Scholar
10 Pichon, L., Raoult, F., Mohamed-Brahim, T., Bonnaud, O., Sehil, H., Solid State Electronics (1995), in press.Google Scholar
11. Greve, D. W., Potiraj, P. A., Guzman, A. M., Solid State Electron. 28, p 1255 (1985).Google Scholar
12. Madan, S. K., Antoniadis, A. D., IEEE Trans. Electron Devices ED–33, p 1518 (1986).Google Scholar
13. Pichon, L., Raoult, F., Bonnaud, O.. Sehil, H., Briand, D., Solid State Electron. 38, p 1515 (1995).Google Scholar
14. Sze, S. M., Physics of Semiconductor Devices, Wiley, new york, 2nd edition, p 442 (1981).Google Scholar
15. Harbeke, G., Krausbauer, L., Steigmer, E. F., Widmer, A. E., Kapper, H. F., Neugebauer, G., J. Electrochem. Soc. 131, p 675 (1984).Google Scholar
16. Mohamed-Brahim, T., Sarret, M., Briand, D., Kis-Sion, K., Bonnaud, O., Hadjaj, A., EURO CVD 10 Proceedings, Venice Sept 1995.Google Scholar
17. Mourgues, K., private communication.Google Scholar
18 Salaiin, A. C., Fortin, B., Bonnaud, O., Morimoto, N., Kis-Sion, K., Lhermite, H., Bihan, F. Le, 10th Congress of the Bresilian Microelectronics Society, Proceedings I Canela RS, Brasil (1995).Google Scholar