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High Performance Plastic Transistors With Printed Polyaniline Electrodes

Published online by Cambridge University Press:  15 February 2011

Michael Lefenfeld ,
Graciela Blanchet  and
John A. Rogers
Michael Lefenfeld
Affiliation:
DuPont Central Research and Development, Wilmington, DE, U.S.A.
Graciela Blanchet
Affiliation:
DuPont Central Research and Development, Wilmington, DE, U.S.A.
John A. Rogers
Affiliation:
Departments of Materials Science and Engineering, Chemistry, Beckman Institute and Materials Research Laboratory, University of Illinois at Urbana/Champaign, Urbana, IL, U.S.A.
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Abstract

This article describes the properties of transistors that use organic semiconductors deposited on top of conducting polymer electrodes patterned by thermal transfer printing onto thin plastic sheets. The polymer, dinonylnaphthalene sulfonic acid doped polyaniline (DNNSA-PANI), contains several weight percent of single walled carbon nanotubes (SWNT) to improve its conductivity. Pentacene serves as the p-type organic semiconductor. The good electrical performance of these devices derives directly from the low resistance contacts between the printed DNNSA-PANI/SWNT source/drain electrodes and the pentacene. The measurements presented here quantify the behavior of these contacts and provide some morphological evidence for their low resistance. The excellent characteristics of the transistors and the operational flexibility of the thermal transfer printing technique that is used to pattern them represent results that may be an important step for the development of means to build realistic flexible electronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H3.8
Copyright
Copyright © Materials Research Society 2003

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