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High Performance IGZO TFTs with Modified Etch Stop Structure on Glass Substrates
Published online by Cambridge University Press: 13 February 2014
Abstract
In this paper, we present fabrication and characterization of RF sputtered a-IGZO TFTs having a modified etch stopper structure with source/drain contact windows on glass wafers. The effect of annealing time and channel length on device performance in terms of mobility, on/off current ratio, average off current, threshold voltage, and sub threshold slope is reported.
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- Information
- MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 95 - 100
- Copyright
- Copyright © Materials Research Society 2014
References
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