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High Performance IGZO TFTs with Modified Etch Stop Structure on Glass Substrates

Published online by Cambridge University Press:  13 February 2014

Forough Mahmoudabadi ,
Ta-Ko Chuang ,
Jerry Ho Kung  and
Miltiadis K. Hatalis
Forough Mahmoudabadi
Affiliation:
Display Research Laboratory, Lehigh University, Bethlehem, PA 18015, USA
Ta-Ko Chuang
Affiliation:
Corning Incorporated, Corning, NY 14831, USA
Jerry Ho Kung
Affiliation:
Department of Electro Optical Engineering, National United University, Miaoli 36003, Taiwan
Miltiadis K. Hatalis
Affiliation:
Display Research Laboratory, Lehigh University, Bethlehem, PA 18015, USA
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Abstract

In this paper, we present fabrication and characterization of RF sputtered a-IGZO TFTs having a modified etch stopper structure with source/drain contact windows on glass wafers. The effect of annealing time and channel length on device performance in terms of mobility, on/off current ratio, average off current, threshold voltage, and sub threshold slope is reported.

Keywords

electrical propertiesthin filmmicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 95 - 100
Copyright
Copyright © Materials Research Society 2014 

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References

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