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High Mobility GaN films Produced by ECR-Assisted MBE

Published online by Cambridge University Press:  25 February 2011

R. J. Molnar ,
T. Lei  and
T. D. Moustakas
R. J. Molnar
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, MA 02215
T. Lei
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, MA 02215
T. D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, MA 02215
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Abstract

High electron mobility autodoped GaN films were produced by the ECR assisted MBE method. The net electron concentration was varied systematically from 2×1019 to 2×1017cm−3 by controlling the active nitrogen overpressure. Correspondingly, the electron mobility increased from 20 to 210 cm2V−1sec−1. The line through the experimental data also predicts the electron mobilities of GaN films produced by the CVD methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 765
Copyright
Copyright © Materials Research Society 1993

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References

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