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High Mobility and Liquid Phase Processable Organic Semiconductors

Published online by Cambridge University Press:  10 February 2011

H. E. Katz
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Laquindanum
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
A. J. Lovinger
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

New thiophene oligomers and fused ring compounds have been designed and synthesized with the aim of maximizing semiconductor mobility in thin film transistors (TFTs) while allowing for liquid phase processability. Thiophene hexamers with alkyl side chains of various lengths, some with an ether oxygen embedded in the chain, were synthesized, as were derivatives of the novel heterocycle anthradithiophene. Mobilities of the vaporphase-deposited films ranged from 0.01 cm2/Vs for the hexamers to 0.15 cm2/Vs for dihexylanthradithiophene. The latter is the highest mobility yet reported for a polycrystalline film. Cast films of some of these compounds from solution gave mobilities within factors of 2–10 of the corresponding values from gas-phase-deposited films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Brown, A.R., Jarett, C.P., de Leeuw, D.M., and Matters, M., Syth. Metals 88, p. 37 (1997); H.E. Katz, J. Mater. Chem. 7, p. 369 (1997).Google Scholar
2. Horowitz, G., Fichou, D., Peng, X., and Gamier, F., Synth. Metals 41–43, p. 1127 (1991), F. Gamier, G. Horowitz, X. Peng, and D. Fichou, Synth. Metals 45, p. 163 (1991).Google Scholar
3. Gamier, F., Yassar, A., Hajlaoui, R., Horowitz, G., Deloffre, F., Servet, B., Ries, S., and Alnot, P., J. Am. Chem. Soc. 115, p. 8716 (1993); H.E. Katz, A. Dodabalapur, L Torsi, and D. Elder, Chem. Mater. 7, p. 2238 (1995).Google Scholar
4. Lin, Y.Y., Gundlach, D.J., Nelson, S.F., and Jackson, T.J., IEEE Transactions on Electronic Devices, 44, p. 1325 (1997).Google Scholar
5. Bao, Z., Feng, Y., Dodabalapur, A., Raju, V.R., and Lovinger, A.J., Chem. Mater. 9, p. 1299 (1997).Google Scholar
6. Brown, A.R., Pomp, A., Hart, C.M., and de Leeuw, D.M., Science 270, p. 972 (1995).Google Scholar
7. Gamier, F., presented at the 1997 Materials Research Society Spring Meeting, April 1997, San Francisco, California.Google Scholar
8. Katz, H.E., Laquindanum, J.G., and Lovinger, A. J., Chem. Mater., accepted for publication; J.G. Laquindanum, H.E. Katz, and A.J. Lovinger, J. Amer. Chem. Soc., accepted for publication.Google Scholar