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High Hf Content NITIHF Shape Memory Films

Published online by Cambridge University Press:  15 February 2011

Chen Zhang ,
Paul E. Thoma  and
Ralph Zee
Chen Zhang
Affiliation:
Materials Research and Education Center, ME Department, Auburn University, Auburn, AL 36849, [email protected]
Paul E. Thoma
Affiliation:
Corporate Technology, Johnson Controls, Inc., 1701 West Civic Dr., Milwaukee, WI 53209
Ralph Zee
Affiliation:
Materials Research and Education Center, ME Department, Auburn University, Auburn, AL 36849, [email protected]
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Abstract

Polycrystalline NiTiHf films with around 9at% Hf have been successfully deposited from a single NiTiHf target using a DC magnetron sputtering system. Free standing films were obtained by depositing the films on single crystal silicon substrates. Thickness of the films was controlled between 10-12µm. In this investigation, the effects of deposition temperature on the crystallinity and transformation temperatures of the films were studied. Substrate temperature during deposition was varied between 300°C and 700°C at 100°C intervals. The influence of heat treatment temperature on the properties of the films was also investigated. The heat treatment temperature was between 300°C and 800°C at 100° C intervals. Transformation temperatures of these films were determined by differential scanning calorimetry (DSC). The crystallinity was determined using x-ray diffractometry. It was found that all the as-deposited films were crystalline even when the substrate temperature was as low as 300°C. Both martensite and austenite transformation temperatures increase with increasing substrate temperature and increasing heat treatment temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 604: Symposium LL – Materials for Smart Systems III , 1999 , 129
Copyright
Copyright © Materials Research Society 2000

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References

1 Busch, J.D. and Johnson, A.D., Journal of Applied Physics, 68 (12), December 15, 1990 pp. 6224–6228.10.1063/1.346914Google Scholar
2 Johnson, A.D., Martynov, V.V. and Minners, R.S., Journal de Physique IV, Colloque C8, Supplément au Journal de Physique III, Vol. 5, D6cembre, 1995 pp. C8–783.Google Scholar
3 Miyazaki, S., Nomura, K., Ishida, A. and Kajiwara, S., Journal de Physique IV, Colloque C5, Vol. 7, Supplément au Journal de Physique III de Novembre 1997 pp. C5–275.Google Scholar
4 Zhang, C., Thoma, P.E., and Zee, R.H. in Materials Processing Fundamentals, edited by Mishra, B., Proceedings of 1999 EPD Congress, TMS, 1999 pp. 139–145.Google Scholar
5 Zhang, C., Thoma, P.E., and Zee, R.H. in Materials for Smart Systems II, edited by George, E.P., Gotthardt, R., Otsuka, K., Trolier-McKinstry, S. and Wun, M.-Fogle (Materials Research Society Proceedings, Vol. 459, Pittsburgh, PA, 1997), pp. 281–286.Google Scholar
6 Zhang, C., master thesis, Auburn University, 1996.Google Scholar
7 Wasa, K. and Hayakawa, S., Handbook of sputter deposition technology … principle, technology and applications, (Noyes Publications, Park Ridge, NY, 1992), pp. 10–13.Google Scholar
8 Ishida, A., Sato, M. and Miyazaki, S. in Proceedings of the Second International Conference on Shape Memory and Superelastic Technologies (SMST-97), edited by Pelton, A., Hodgson, D., Russell, S. and Duerig, T. (Asilomar conference Center, Pacific Grove, CA, 1997), pp. 161–166.Google Scholar