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High Energy Ion Beam Annealing in Implanted CdTe

Published online by Cambridge University Press:  26 February 2011

S. P. Withrow ,
A. Lusnikov ,
H. J. Jiménez-Gonz´lez-  and
G. Dresselhaus
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
A. Lusnikov
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
H. J. Jiménez-Gonz´lez-
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
G. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

The annealing effects of a high energy beam of Cu ions on implanted CdTe crystals are studied. Single crystals of CdTe have been implanted with Eu (energy 60 keV, fluence 1 × 1016 cm−2) at substrate temperatures of 25°C, and 400°C. Lattice damage introduced by the implantation process was measured by Rutherford backscattering. The samples were then implanted with high energy Cu ions (energy 3.5 MeV, fluence 0.5 × 1016 cm−2) at substrate temperatures of 25°C and 200°C. Channeling spectra from these samples indicate a reduction in the near-surface lattice damage as a result of the Cu implantation that can be unambiguously separated from the external heating of the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 305
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] Nakata, J. and Kajiyama, K., Appl. Phys. LeUt. 40, 686 (1982).CrossRefGoogle Scholar
[2] Linnros, J., Svensson, B., and Holmen, G., Phys. Rev. B 30, 3692 (1984).CrossRefGoogle Scholar
[3] Williams, J.S., Elliman, R.G., Brown, W.L., and Seidel, T.E., Phys. Rev. Lett. 55, 1482 (1985).CrossRefGoogle Scholar
[4] Elliman, R.G., Williams, J.S., Johnson, S.T. and Nygren, E. in Beam-Solid Interactions and Transient Processes, edited by Thompson, Michael O., Picraux, S. Thomas, and Williams, James S. (Mater. Res. Soc. Proc. 60, Pittsburgh, PA 1986) pp. 471–476.Google Scholar
[5] Atwater, H.A., Smith, H.I., and Thompson, C.V. in Beam-Solid Interactions and Transient Processes, edited by Thompson, Michael O., Picraux, S. Thomas, and Williams, James S. (Mater. Res. Soc. Proc. 60, Pittsburgh, PA 1986) pp. 499–504.Google Scholar
[6] Elliman, R.J., Johnson, S.T., Pogany, A.P., and Williams, J.S., NucL. Instr. and Meth. 7/8, 310 (1985).CrossRefGoogle Scholar
[7] Brandt, N.B. and Moshchalkov, V.V., Adv. Phys. 33, 193 (1984).CrossRefGoogle Scholar