Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:27:15.916Z Has data issue: false hasContentIssue false
  • English
  • Français

High Energy Flux Detector Using CdTe P-I-N Layers

Published online by Cambridge University Press:  10 February 2011

Madan Niraula ,
Tomonori Arakawa ,
Toru Aoki ,
Yoichiro Nakanishi ,
Yoshinori Hatanaka  and
Hirofumi Kan
Madan Niraula
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University, Hamamatsu 432, JAPAN, [email protected]
Tomonori Arakawa
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University, Hamamatsu 432, JAPAN, [email protected]
Toru Aoki
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University, Hamamatsu 432, JAPAN, [email protected]
Yoichiro Nakanishi
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University, Hamamatsu 432, JAPAN, [email protected]
Yoshinori Hatanaka
Affiliation:
Graduate School of Electronic Science and Technology, Shizuoka University, Hamamatsu 432, JAPAN, [email protected]
Hirofumi Kan
Affiliation:
Central Research Laboratory, Hamamatsu Photonics K. K., Hamakita 434, JAPAN
Get access

Abstract

n-and p-type doping of CdTe grown heteroepitaxially on GaAs substrate by radical assisted metal organic chemical vapor deposition technique were studied. n-type doping was studied by the gas phase n-butyliodine doping during the film growth, whereas p-type doping was carried by treating the undoped layers with alkaline metal compound (Na2Te) and excimer laser radiation. Highly conductive n-and p-layers were thus obtained which formed good ohmic contact with aluminum and gold electrodes, respectively. Using this technique, n-and p- layers were formed on intrinsic CdTe substrate to form p-i-n diode. This p-i-n structure showed a good diode characteristics and good sensitivity to X-ray radiation with dark current in the order of nA/mm 2 at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 287
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mergui, S., Hage-Ali, M., Koebel, J. M., and Siffert, P., Nucl. Instr. Meth. Phys. Res. A322, 381 (1992).Google Scholar
2. Alexiev, D., Butcher, K. S. A., and Williams, A. A., J. Cryst. Growth 142, 303 (1994).Google Scholar
3. Tsutsui, H., Ohtsuchi, T., Ohmori, K., and Baba, S., IEEE Trans. Nucl. Sci. 40, 40 (1993).Google Scholar
4. Cuzin, M., Nucl. Instr. Meth. Phys. Res. A322, 341 (1992).Google Scholar
5. Tomita, Y., Hatanaka, Y., Takabayashi, T., and Kawai, T., IEEE Trans. Electron Devices 40, 315(1993).Google Scholar
6. Niemela, A. and Sipila, H., IEEE Trans. Nucl. Sci. 43, 1476 (1996).Google Scholar
7. Khusainov, A. Kh., Nucl. Inst. Meth. Phys. Res. A322, 335 (1992).Google Scholar
8. Hatanaka, Y., Aoki, T., Morita, M., and Nakanishi, Y., Appl. Surf. Sci. 100/101, 621 (1996).Google Scholar
9. Aoki, T., Morita, M., Wickramanayaka, S., Nakanishi, Y., and Hatanaka, Y., Appl. Surf. Sci. 92, 132(1996).Google Scholar
10. Rajavel, D., Waqgner, B. K., Benz, R. G. II, Conte, A., Maruyama, K., Summers, C. J., and Bensor, J. D., J. Vac. Sci. Technol. 10, 1443 (1992).Google Scholar
11. DePuydt, J. M., Haase, M. A., Cheng, H., and Potts, J. E., Appl. Phys. Lett. 55, 1103 (1989).Google Scholar