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High Electric Field Breakdown of 4H-SiC PN Junction Diodes

Published online by Cambridge University Press:  15 February 2011

C. C. Tin ,
V. Madangarli ,
R. Hu ,
E. Luckowski ,
J. Casady ,
T. Isaacs-Smith ,
G. Gradinaru ,
T. S. Sudarshan  and
R. W. Johnson
C. C. Tin
Affiliation:
Department of Physics, Auburn University, AL 36849, [email protected]
V. Madangarli
Affiliation:
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208
R. Hu
Affiliation:
Department of Physics, Auburn University, AL 36849, [email protected]
E. Luckowski
Affiliation:
Department of Physics, Auburn University, AL 36849, [email protected]
J. Casady
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
T. Isaacs-Smith
Affiliation:
Department of Physics, Auburn University, AL 36849, [email protected]
G. Gradinaru
Affiliation:
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208
T. S. Sudarshan
Affiliation:
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208
R. W. Johnson
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
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Abstract

We have characterized the high electric field breakdown process of several epitaxial 4H-SiC p-n structures with oxide passivation. The breakdown voltage was found to be dependent on the size of the diode structures as well as their proximity to any structural defects. The time dependence of the breakdown process was also measured to determine the characteristics of the breakdown mechanism. This time dependence measurement provides an indication of the quality of the diode structures. Both soft and abrupt breakdown mechanisms were observed showing the influence of defects on the high field behavior of the diode structures. Measurements done with and without the use of Fluorinert fluid did not show any difference in the breakdown voltage indicating that surface flashover breakdown mechanism did not play a major role in the avalanche breakdown process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 111
Copyright
Copyright © Materials Research Society 1996

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References

1. Matus, L. G., Powell, J. A., and Salupo, C. S., Appl. Phys. Lett. 59, 1770 (1991).Google Scholar
2. Bhatnagar, M., McLarty, P. K., and Baliga, B. J., IEEE Electron Device Lett. 13, 501 (1992).Google Scholar
3. Kimoto, T., Urushidani, T., Kobayashi, S., and Matsunami, H., IEEE Electron Device Lett. 14, 549 (1993).Google Scholar
4. Alok, D., Baliga, B. J., and McLarty, P., IEEE Electron Device Lett. 15, 394 (1994).Google Scholar
5. Palmour, J. W., Edmond, J. A., Kong, H. S., and Carter, C. H., Jr., Physica B 185, 461 (1993).Google Scholar