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High Efficiency Solar Cells with Intrinsic Microcrystalline Silicon Absorbers Deposited at High Rates by VHF-PECVD

Published online by Cambridge University Press:  01 February 2011

Yaohua Mai ,
Stefan Klein ,
Reinhard Carius ,
Xinhua Geng  and
Friedhelm Finger
Yaohua Mai
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany Institute of Photoelectronics, Nankai University, Tianjin 300071, P. R. China.
Stefan Klein
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Reinhard Carius
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Xinhua Geng
Affiliation:
Institute of Photoelectronics, Nankai University, Tianjin 300071, P. R. China.
Friedhelm Finger
Affiliation:
IPV, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Intrinsic microcrystalline silicon (μc-Si:H ) was prepared at high deposition rates (RD) by very high frequency plasma-enhanced chemical vapor deposition (PECVD) working at high-pressure high-power (hphP). The material has similar electrical and optical properties as μc-Si:H material deposited at low rates by low-pressure low-power PECVD, apart from a more pronounced structure in-homogeneity along the growth axis for material deposited on glass substrates. With optimized deposition conditions high efficiency solar cells can be grown with deposition rates of up to 15 Å/s without deterioration of the performance as a function of RD. A high conversion efficiency of 9.8 % was obtained for a single junction μc-Si:H p-i-n solar cell at a deposition rate of RD = 11 Å/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A23.2
Copyright
Copyright © Materials Research Society 2005

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References

1 Finger, F., Hapke, P., Luysberg, M., Carius, R., Wagner, H., and Scheib, M., Appl. Phys. Lett. 65, 2588 (1994).10.1063/1.112604Google Scholar
2 Vetterl, O., Finger, F., Carius, R., Hapke, P., Houben, L., Kluth, O., Lambertz, A., Mück, A., Rech, B., and Wagner, H., Sol. Energ. Mat. Sol. C. 62, 97 (2000).10.1016/S0927-0248(99)00140-3Google Scholar
3 Keppner, H., Meier, J., Torres, P., Fischer, D., and Shah, A., Appl. Phys. A: Mater. Sci. Process. 69, 169 (1999).10.1007/s003390050987Google Scholar
4 Guo, L., Kondo, M., Fukawa, M., Saitoh, K., and Matsuda, A., Jpn. J. Appl. Phys. 37, L1116 (1998).10.1143/JJAP.37.L1116Google Scholar
5 Roschek, T., Repmann, T., Müller, J., Rech, B., and Wagner, H., J. Vac. Sci. Technol. A 20, 492 (2002).10.1116/1.1450585Google Scholar
6 Fukawa, M., Suzuki, S., Guo, L., Kondo, M., and Matsuda, A., Sol. Energ. Mat. Sol. C. 66, 217, (2001).10.1016/S0927-0248(00)00176-8Google Scholar
7 Matsui, T., Kondo, M., and Matsuda, A., Jpn. J. Appl. Phys., Part II: Letters 42, L901 (2003).10.1143/JJAP.42.L901Google Scholar
8 Mai, Y., Klein, S., Geng, X., and Finger, F., Appl. Phys. Lett. 85, 2839 (2004).10.1063/1.1801676Google Scholar
9 Klein, S., Wolff, J., Finger, F., Carius, R., Wagner, H., and Stutzmann, M., Jpn. J. Appl. Phys., Part II: Letters 41, L10 (2002).10.1143/JJAP.41.L10Google Scholar
10 Kluth, O., Rech, B., Houben, L., Wieder, S., Schöpe, G., Beneking, C., Wagner, H., Löffl, A., and Schock, H.W., Thin Solid Films 351, 247 (1999).10.1016/S0040-6090(99)00085-1Google Scholar
11 Wagner, H., Beyer, W., Solid State Comm. 48, 585 (1983).10.1016/0038-1098(83)90520-3Google Scholar
12 Beyer, W. and Ghazala, M. S. Abo, MRS Symposium Proceeding 507, 601 (1998).10.1557/PROC-507-601Google Scholar
13 Finger, F., Carius, R., Dylla, T., Klein, S., Okur, S., Günes, M., IEE Proceedings Circuits, Devices and Systems 150, 300 (2003).10.1049/ip-cds:20030636Google Scholar
14 Mai, Y., Klein, S., Finger, F., Carius, R., Wolff, J., Lambertz, A., and Geng, X., unpublished.Google Scholar
15 Carius, R., unpublished.Google Scholar
16 Ross, C., Mai, Y., Carius, R., and Finger, F., this conference.Google Scholar
17 Klein, S., Finger, F., Carius, R., Wagner, H., and Stutzmann, M., Thin Solid Films 395, 305 (2001).10.1016/S0040-6090(01)01280-9Google Scholar