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High Dose Implantation of Nitrogen and Phosphor into Silica Glass

Published online by Cambridge University Press:  25 February 2011

Takashi Tagami ,
Keiji Oyoshi  and
Shuhei Tanaka
Takashi Tagami
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd., 5–4 Tokodai, Tsukuba City, Ibaraki, 300-26 Japan
Keiji Oyoshi
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd., 5–4 Tokodai, Tsukuba City, Ibaraki, 300-26 Japan
Shuhei Tanaka
Affiliation:
Tsukuba Research Laboratory, Nippon Sheet Glass Co., Ltd., 5–4 Tokodai, Tsukuba City, Ibaraki, 300-26 Japan
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Abstract

The surface chemistry of silica glass implanted with N+ or P+ ions has been studied. The X-ray photoelectron spectroscopy (XPS) spectra of N(1s) for silica glass implanted with N+ shows the possibility of the formation of oxynitride glass. For the first time, the effect of the implantation of N+ and additional Si+ on the surface chemistry of silica glass has been studied and found to be significant in increasing the nitrogen concentration in the silica glass. The peak concentration of N increases several times, and does not change even if the sample is annealed at 900°C. The XPS spectra of P(2p) for silica glass implanted with P+ ions shows two interactions, both P-O and P-P. Therefore, the XPS spectra shows the possibility for the formation of phosphosilicate glass using P+ implantation into silica glass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 519
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Naik, I.K.,Appl.Phys.Lett.,43,519 (1983).CrossRefGoogle Scholar
[2] Wang, C.,Tao, Y. and Wang, S.,J.Non-Cryst.Solids,52,589 (1982).Google Scholar
[3] Mazzoldi, P.,Nucl.Instrum.and Methods,209/210,1089 (1983).Google Scholar
[4] Arnold, G.W.,Radiat.Eff.,65,257 (1982).Google Scholar
[5] Jech, C. and Bastl, Z.,Radiat.Eff.Lett.,76,25 (1983).Google Scholar
[6] Wang, C. and Tao, Y.,J.Non-Cryst.olids,71,397 (1985).Google Scholar
[7] Solnick-Legg, H. and Legg, K.O.,Met.Pro.,129,25 (1986).Google Scholar
[8] Balkand, P. and Eldridge, J.M.,Proc.IEEE,57,1558 (1969).Google Scholar