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High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

Published online by Cambridge University Press:  03 September 2012

A.P. Zhang ,
G. Dang ,
F. Ren ,
X.A. Cao ,
H. Cho ,
E.S. Lambers ,
S.J. Pearton ,
R.J. Shul ,
L. Zhang  and
A.G. Baca
...Show all authors
A.P. Zhang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
G. Dang
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering University of Florida, Gainesville, FL 32611
X.A. Cao
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
H. Cho
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
E.S. Lambers
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
R.J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
L. Zhang
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
A.G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
R. Hickman
Affiliation:
SVT Associates, Eden Prairie, MN 55344
J.M. Van Hove
Affiliation:
SVT Associates, Eden Prairie, MN 55344
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Abstract

The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼500 Å. Post-etch annealing was found to partially restore the diode characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.66
Copyright
Copyright © Materials Research Society 1999

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