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High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System

Published online by Cambridge University Press:  26 February 2011

R. M. Kapre ,
Li Chen ,
K. Kaviani ,
Kezhong Hu ,
Ping Chen  and
A. Madhukar
R. M. Kapre
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
Li Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
K. Kaviani
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
Kezhong Hu
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
Ping Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
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Abstract

We report the the first demonstration of optically bistable switching in monolithic opto-electronic transistor configuration using all III-V components. A strained InGaAs/GaAs asymmetric Fabry-Perot (ASFP) modulator / detector, a strained resonant tunneling diode (RTD), and a GaAs based field-effect-transistor (FET) were used in this demonstration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 875
Copyright
Copyright © Materials Research Society 1992

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References

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