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High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Published online by Cambridge University Press:  21 March 2011

Kazuhide Kumakura ,
Toshiki Makimoto  and
Naoki Kobayashi
Kazuhide Kumakura
Affiliation:
NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Toshiki Makimoto
Affiliation:
NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Naoki Kobayashi
Affiliation:
NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Abstract

We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I12.2.1
Copyright
Copyright © Materials Research Society 2002

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