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HgCdTe MBE Technology : A Focus On Chemical Doping

Published online by Cambridge University Press:  21 February 2011

Owen K. Wu
Owen K. Wu*
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
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Abstract

HgCdTe MBE technology is becoming a mature growth technology for infrared focal plane array applications. The ability to dope HgCdTe with In(n-type) and As(p-type) dopants in-situ provides greater flexibilities for fabricating heterojunction devices. In this paper, we will first discuss the current status of HgCdTe MBE growth and then focus on the key results in the control of In(n-type) doping, various approaches and breakthroughs in the growth of As(p-type) doped HgCdTe and issues related to doping such as memory effects and dopants activation. In addition, device results from double layer heterojunction structure(DLHJ) will be briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 423
Copyright
Copyright © Materials Research Society 1993

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References

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