Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T09:06:24.295Z Has data issue: false hasContentIssue false
  • English
  • Français

Heterostructures with Strained InGaAs Quantum Wells for RCE Photodiode Applications in the 1.8–2 μm Spectral Range

Published online by Cambridge University Press:  26 February 2011

Jadwiga Zynek ,
Agata Jasik ,
Jaroslaw Gaca ,
Marek Wojcik ,
Wlodzimierz Strupinski ,
Jaroslaw Rutkowski ,
Artur Wnuk  and
Krzysztof Klima
Jadwiga Zynek
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Agata Jasik
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Jaroslaw Gaca
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Marek Wojcik
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Wlodzimierz Strupinski
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Jaroslaw Rutkowski
Affiliation:
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00–908 Warsaw, Poland
Artur Wnuk
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Krzysztof Klima
Affiliation:
Institute of Electronic Materials Technology, 133 Wolczynska str., 01–919 Warsaw, Poland
Get access

Abstract

The results of the work on the technology and characterization methods of resonant cavity enhanced (RCE) photodiode heterostructures with strained InxGa1–xAs quantum wells (0.65≤x≤0.82), designed for the 1.8 - 2 μm spectral range, are presented. The heterostructures grown on InP by metalorganic chemical vapor deposition have been investigated by high-resolution X-ray diffraction with synchrotron source, transmission electron microscopy, photoluminescence and reflectivity spectra measurements. Non-resonant photodiodes fabricated from these epitaxial structures exhibit dark current densities below 10-6 A/cm2 and quantum efficiencies above 1 % (even without bias). These quantum efficiency values are a good basis for the resonant cavity enhancement. The optical field enhancement at quantum wells has been examined in resonant heterostructures before processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.9
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jourba, S., Besland, M.P., Gendry, M., Garrigues, M., Leclercq, J.L., Rojo-Romeo, P., Viktorovich, P., Cortial, S., Hugon, X. and Pautet, C., “2 m resonant cavity enhanced InP/InGaAs single quantum well photo-detector”, Electron. Lett. 35, 1272–1274 (1999).Google Scholar
2. Jourba, S., Besland, M.P., Gendry, M., Garrigues, M., Leclercq, J.L., Rojo-Romeo, P., Viktorovich, P., Cortial, S., Hugon, X. and Pautet, C., “NIR resonant cavity enhanced InP/InGaAs trained quantum well inter-band photo-detector” Proc. SPIE, 3629, 307–318 (1999).Google Scholar
3. Zynek, J., Jasik, A., Strupinski, W., Rutkowski, J., Jagoda, A., Przyborowska, K., Jakiela, R., Piersa, M. and Wnuk, A., “Photodiode with resonant cavity based on InGaAs/InP for 1.9 μm band”, Opto-Electron. Rev., 12, 161–167 (2004).Google Scholar