Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-04T21:34:25.962Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

Published online by Cambridge University Press:  25 February 2011

Zheng Youdou ,
Zhang Rong ,
Hu Liqun ,
Gu Shulin ,
Wang Ronghua ,
Han Ping  and
Jiang Ruolian
Zheng Youdou
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Zhang Rong
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Hu Liqun
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Gu Shulin
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Wang Ronghua
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Han Ping
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Jiang Ruolian
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Get access

Abstract

A rapid radiant heating, very low pressure CVD (RRH/VLP—CVD) has been successfully applied to GexSi1−x strained layer epitaxy on Si using SiH4' GeH4' B2H6 and PH3 as reaction gases at low temperature ranging from 550 to 650ĉ for operation pressure around mTorr. High quality GexSi1−x/Si strained layer heterostructure and superlattice were fabricated and high electrically active in—situ boron doping in GexSi1−x epilayer was also successfully achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 227
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahka, S. and Robinson, I.K., J. Vac. Sci. Technol., A2, 436 (1984)Google Scholar
[2] Youdou, Zheng, Rong, Zhang, Ruolian, Jiang, Liqun, Hu, Peixin, Zhong, Shuiyuan, Mo, Shidong, Yu, Qi, Li and Duan, Feng, Proceedings of 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 1990, Vol.2, 869 (1990)Google Scholar
[3] Youdou, Zheng, Rong, Zhang, Liqun, Hu, Shulin, Gu, Ruolian, Jiang, Peixin, Zhong, Linhong, Qin, Hongtao, Shi, Shidong, Yu, Qi, Li and Duan, Feng, 5th International Conference on Modulation Semiconductor Structures. (Nara, Japan, 1991)Google Scholar
[4] Kern, W., Semicond. Int., p194, April (1984)Google Scholar