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Heteroepitaxial Growth of GexSi1−x Strained Layer on Si by RRH/VLP—CVD

Published online by Cambridge University Press:  25 February 2011

Zheng Youdou ,
Zhang Rong ,
Hu Liqun ,
Gu Shulin ,
Wang Ronghua ,
Han Ping  and
Jiang Ruolian
Zheng Youdou
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Zhang Rong
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Hu Liqun
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Gu Shulin
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Wang Ronghua
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Han Ping
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
Jiang Ruolian
Affiliation:
Department of physics, Nanjing University Nanjing 210008, China Fax: 86–25–307965
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Abstract

A rapid radiant heating, very low pressure CVD (RRH/VLP—CVD) has been successfully applied to GexSi1−x strained layer epitaxy on Si using SiH4' GeH4' B2H6 and PH3 as reaction gases at low temperature ranging from 550 to 650ĉ for operation pressure around mTorr. High quality GexSi1−x/Si strained layer heterostructure and superlattice were fabricated and high electrically active in—situ boron doping in GexSi1−x epilayer was also successfully achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 227
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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