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Heteroepitaxial Growth of Antiphase-Boundary Free Cubic Sic(100) Single Crystals on Si(100)

Published online by Cambridge University Press:  25 February 2011

Kentaro Shibahara ,
Shigehiro Nishino  and
Hiroyuki Matsunami
Kentaro Shibahara
Affiliation:
Dept. of Elec. Eng., Kyoto Univ., Sakyo, Kyoto 606, Japan
Shigehiro Nishino
Affiliation:
Dept. of Elec. Eng., Kyoto Univ., Sakyo, Kyoto 606, Japan
Hiroyuki Matsunami
Affiliation:
Dept. of Elec. Eng., Kyoto Univ., Sakyo, Kyoto 606, Japan
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Abstract

Cubic SiC was grown on Si substrates by a combination of carbonization and consecutive chemical vapor deposition. Grown layers on the (100) and (111) substrates were single crystalline cubic SiC. Those on the (110) and (211) were poly-crystalline. A model for the mechanism of carbonization was proposed as a result of these observations. Based on this model, the origin of antiphase boundaries were made clear, and antiphase boundaries were expected to be eliminated by controlling atomic steps of the Si surface. In fact, antiphase boundaries were eliminated by introduction of off orientation of Si(lO0) substrates. The relationship between generation of antiphase boundaries and off orientation of the surface was investigated by using spherically polished Si(100) substrates. Off orientation towards (011) was found to be effective for elimination of antiphase boundaries. Off orientation except for towards (011) resulted in generation of antiphase boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 183
Copyright
Copyright © Materials Research Society 1987

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References

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