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Heavy-to-light hole intersubband absorption in the valence band of GaAs/AlAs heterostructures

Published online by Cambridge University Press:  18 March 2013

M. I. Hossain ,
Z. Ikonic ,
J. Watson ,
J. Shao ,
P. Harrison ,
M. J. Manfra  and
O. Malis
M. I. Hossain
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA
Z. Ikonic
Affiliation:
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
J. Watson
Affiliation:
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA
J. Shao
Affiliation:
Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA
P. Harrison
Affiliation:
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
M. J. Manfra
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA
O. Malis
Affiliation:
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA
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Abstract

We performed a thorough investigation of mid-infrared heavy-to-light hole intersubband absorption in the valence band of p-doped GaAs quantum wells with AlAs barriers. For the p-type doping a high-purity solid carbon source was used. The experimental results are compared with theoretical simulations. The inclusion of layer inter-diffusion well reproduces the transition energies. We estimate a 6-10 Å inter-diffusion length that is consistent with electron microscopy measurements. A careful analysis of our results provides valuable information for further design of emitters and detectors based on hole intersubband transitions in the valence band.

Keywords

absorptionIII-Vinfrared (IR) spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1509: Symposium CC – Optically Active Nanostructures , 2013 , mrsf12-1509-cc05-07
Copyright
Copyright © Materials Research Society 2013

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