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Hall Effect Measurements On SixGe1−x Bulk Alloys

Published online by Cambridge University Press:  15 February 2011

T. Mchedlidze  and
I. Yonenaga
T. Mchedlidze
Affiliation:
Komatsu Electronic Metals Co.Ltd., 2612 Shinomiya, Hiratsuka, 254, JAPAN
I. Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
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Abstract

Carrier transport measurement results for SixGe1−x bulk alloys with 0.03≤x≤0.9, grown by the Czochralski method are presented. Both monocrystalline (x=0.03 and x=0.23) and polycrystalline (x=0.12, 0.25, 0.4, 0.5, 0.75, 0.9) samples were analyzed. In all samples additional charge carriers were created during growth or/and cooling of crystals. With n-type starting materials only alloy with x=0.9 revealed n-type conductivity, all other alloys were of ptype. Creation of acceptors in the SixGe1−x alloy grown by Czochralski method is maximal for 0.4≤x≤0.75.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 381
Copyright
Copyright © Materials Research Society 1997

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References

1. Dahlen, A., Fattah, A., Hanke, G. and Karthaus, E., Cryst. Res. Technol. 29, p. 187 (1994)Google Scholar
2. Kurten, M. and Schilz, J., J. Crystal Growth 139, 1 (1994)Google Scholar
3. Yonenaga, I., Matsui, A., Tozawa, S., Sumino, K. and Fukuda, T., J.Crystal Growth 154, p. 275 (1995)Google Scholar
4. Mchedlidze, T.R., Yonenaga, I., Matsui, A. and Sumino, K., Mat. Sci. Forum, 196–201, p. 353 (1995)Google Scholar
5. Mchedlidze, T.R. and Yonenaga, I., Jpn. J. Appl. Phys. 35, p. 652 (1996)Google Scholar
6. Pauw, L.J. van der, Philips Research Reports 16, p. 187 (1961)Google Scholar
7. Montgomery, H.C., J.Appl.Phys., 42, p. 2971 (1971)Google Scholar
8. Murin, L.I. and Markevich, V.P., Mat Sci. Forum, 196–201, p. 1315 (1995)Google Scholar