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Hall Effect Investigation of Doped and Undoped ßB-FESI2

Published online by Cambridge University Press:  15 February 2011

S. Brehme ,
L. Ivanenko ,
Y. Tomm ,
G.-U. Reinsperger ,
P. Staulß  and
H. Lange
S. Brehme
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
L. Ivanenko
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
Y. Tomm
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
G.-U. Reinsperger
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
P. Staulß
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
H. Lange
Affiliation:
Dept. A P, Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

Polycrystalline ß-FeSi2 layers prepared by codeposition of Si and Fe on cold and hot Si substrates and ß-FeSi2, crystals grown by chemical vapor transport were investigated. Resistivity and Hall effect measurements revealed the p-type conductivity of undoped material and the influence of some dopants of the iron group. The activation energy of a Cr-related acceptor was determined to about 85 meV. The mobility data were found to depend significantly on the purity of the preparation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 355
Copyright
Copyright © Materials Research Society 1996

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References

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