Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:23:33.811Z Has data issue: false hasContentIssue false
  • English
  • Français

Hacroscopic Defects in Epitaxial Silicon on Simox and in Annealed SIMOX

Published online by Cambridge University Press:  28 February 2011

A. Mogro-Campero ,
N. Lewis  and
S.A. Al-Marayati
A. Mogro-Campero
Affiliation:
GE Research and Development Center, P.O. Box 8, Schenectady, N.Y. 12301
N. Lewis
Affiliation:
GE Research and Development Center, P.O. Box 8, Schenectady, N.Y. 12301
S.A. Al-Marayati
Affiliation:
GE Research and Development Center, P.O. Box 8, Schenectady, N.Y. 12301
Get access

Abstract

Epitaxial silicon layers of 5¼m were grown on SIMOX wafers. The dislocation density decreases by more than an order of magnitude as a function of distance away from the buried oxide. Shallow pits (about 0.5 urn deep and several um wide) are observed on the epitaxial layer with a density of 1-2 mm2. Their density did not change with various processing variations. A search for the origin of the pits by transmission electron microscopy reveals that they may be associated with regions of irregularly thin and sometimes missing buried oxide, which appear after the usual high temperature SIMOX annealing step. These defective regions in the buried oxide appear to initiate twinned growth in the epitaxial silicon, and are associated with pits at the top epitaxial silicon surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 123
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lam, H.W., IEEE Circuits and Devices Magazine 3 (4), 6 (1987).CrossRefGoogle Scholar
2 Celler, G.K., Solid State Technology 1987 (3), 93.Google Scholar
3 Lam, H.W., in Epitaxial Silicon Technology, edited by Baliga, B.J. (Academic Press Inc., New York, 1986) p. 269.CrossRefGoogle Scholar
4 Foster, D.J., Electron. Lett. 19, 684 (1983).Google Scholar
5 Izumi, K., Omura, Y., and Sakai, T., J. Electron. Mater. 12, 845 (1983).Google Scholar
6 Colinge, J.-P., Hashimoto, K., Kamins, T., Chiang, S.Y., Liu, E.-D., Peng, S., and Rissman, P., IEEE Electron Device Lett. EDL–7, 279 (1986).Google Scholar
7 McLarty, P.K., Cole, J.W., Galloway, K.F., Ioannou, D.E., and Bernacki, S.E., Appl. Phys. Lett. 51, 1078 (1987).Google Scholar
8 Hofmann, K. and Raider, S.I., J. Electrochem. Soc. 134, 240 (1987).Google Scholar
9 Mogro-Campero, A., Love, R.P., Lewis, N., Hall, E.L., and McConnell, M.D., J. Appl. Phys. 60, 2103 (1986).CrossRefGoogle Scholar
10 Mogro-Campero, A., J. Appl. Phys 61, 639 (1987).Google Scholar