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Growth Stress in CVD-WGex Films Deposited by Reduction of WF6 by GeH4

Published online by Cambridge University Press:  15 February 2011

G.J. Leusink ,
T.G.M. Oosterlaken ,
G.C.A.M. Janssen  and
S. Radelaar
G.J. Leusink
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
T.G.M. Oosterlaken
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
G.C.A.M. Janssen
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
S. Radelaar
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
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Abstract

Growth stresses in thin metal films on a substrate are important for integrated circuit device fabrication and reliability. The development of growth stress in blanket CVD-WGex films deposited by GeH4 reduction of WF6 is studied by in situ wafer curvature measurements. Depending on process conditions, the growth stress varies from 600 MPa tensile in β-WGex films deposited at low temperatures (T < 400 °C) to 400 MPa compressive in α-WGex films deposited at high temperatures (T > 400 °C). At very low temperatures amorphous WGex films grow without significant stress. Development of tensile growth stress is favoured by low temperatures and high growth rates, whereas development of compressive growth stress is favoured by high temperatures and low growth rates. Although the material properties of CVD-WGex films depend on process conditions, the development of growth stress in these films shows a dependence on deposition temperature and growth rate which is similar to pure α-W films deposited by H2 reduction of WF6. The results will be discussed in view of a model which has recently been put forward to explain development of growth stress in polycrystalline metal films on a substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 27
Copyright
Copyright © Materials Research Society 1993

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References

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