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Growth of TiO2 Thin Films by Pulsed Laser Evaporation

Published online by Cambridge University Press:  16 February 2011

Ming Y. Chen  and
P. Terrence Murray
Ming Y. Chen
Affiliation:
Wright Research & Development Center, WRDC/MLBM, Wright-Patterson AFB, OH 45433– 6533
P. Terrence Murray
Affiliation:
Institute, University of Dayton, Dayton OH 45469
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Abstract

Thin films of TiO2 have been grown by pulsed laser evaporation. The films were analyzed by in-situ Auger and x-ray photoelectron spectroscopy as well as by ex-situ grazing incidence xray diffraction. Films grown at room temperature and at a pressure of 5×10minus; 3 Torr were oxygen deficient. Films grown at 500°C and higher were found to be stoichiometric TiO2.The effect of substrate temperature and evaporation conditions on film properties will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 191: Symposium N – Laser Ablation for Materials Synthesis , 1990 , 43
Copyright
Copyright © Materials Research Society 1990

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References

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