Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T08:53:47.550Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Tin Oxide Film Deposited by a Hybrjd Ion Beam

Published online by Cambridge University Press:  21 February 2011

W.K. Choi ,
J.S. Cho ,
S.K. Song ,
H.-J. Jung ,
J.S. Jeon ,
D. Choi  and
S.K. Koh
W.K. Choi
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, Seoul, Korea
J.S. Cho
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, Seoul, Korea
S.K. Song
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, Seoul, Korea
H.-J. Jung
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, Seoul, Korea
J.S. Jeon
Affiliation:
R & D Center,Korea Gas Corporation, 277-1, Ansan city, Kyunggi-Do, Korea
D. Choi
Affiliation:
R & D Center,Korea Gas Corporation, 277-1, Ansan city, Kyunggi-Do, Korea
S.K. Koh
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, Seoul, Korea
Get access

Abstract

Tin oxide thin films were grown on Si(100) substrates by a hybrid ion beam consisting of a partially ionized beam and a cold hollow cathode ion source. Tin metal particles were ionized and accelerated by a partially ionized ion beam source while oxygen gas was introduced or ionized oxygen was introduced upon the Si substrate. When oxygen gas was blown near the substrate during Sn metal evaporation, the composition of deposited tin oxide films revealed mainly Sn metal and SnO, whereas tin dioxide films with highly preferred orientation of SnO2<200 or SnO2<110 axis were successfully grown when ionized oxygen was assisted. The calculated value of the composition ratio of oxygen to Sn(O/Sn) by AES for the SnO2(200) film was approximately 1.98. Moreover, the binding energy of Sn 3d5/2 was determined to be at 486.74 eV by XPS measurement, and the result coincided well with that of standard SnO2 powder. Compared with two different deposition processes, ionized oxygen assistance during tin metal evaporation would be considered to effectively improve oxygen content for the formation of tin dioxide thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 611
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Caslavska, V. and Roy, R., J. Appl. Phys. 40, 3414 (1986).Google Scholar
2 McAleer, J. F., Moseley, P. T., Noms, J. O., and Williams, D. E., J. Chem. Soc. Faraday Trans. 83, 1323(1987).Google Scholar
3 Demarne, V. and Grisel, A., Sensors and Actuators B, 15–16, 63 (1993).Google Scholar
4 Deschanvres, J.L, Cellier, F., Delabouglise, G., Labeau, M., Langlet, M., and Joubert, J. C., J. Phys. 50, C5(1990).Google Scholar
5 Takagi, T., Ionized-Cluster Beam Deposition andEpitaxy(Noyes Publications, Kyoto, 1988), p.175.Google Scholar
6 Fukushima, K., Yamada, I. and Takagi, T., J. Appl. Phys. 58(11), 4146 (1985).Google Scholar
7 Ito, H., Kajita, N., Yamaji, S. and Minowa, Y., Jpn. J. Appl. Phys. 30, 3228 (1991).Google Scholar
8 Koh, S.K., Jin, Z., Lee, J., Jung, H.-J., Kim, K. H., and Choi, D.-J., J. Vac. Sci. Technol. 13(4), 2123 (1995).Google Scholar
9 Yamada, I., Inokawa, H. and Takagi, T., Proc. Int'l Workshop on ICBT Tokyo-Kyoto, Kyoto(Research Group of Ion Eng. Kyoto Univ. 1986), p. 29.Google Scholar
10 Tsukazaki, H., Yamanishi, K. and Yasunaga, S., Proc. 11th Symp. on ISIAT'87, Tokyo(EEEJ, Tokyo, 1987), p. 305.Google Scholar
11 Negishi, T., Itoh, M. and Kimijima, F., Proc. Int'l Workshop on ICBT Tokyo-Kyoto, Kyoto(Research Group of Ion Eng. Kyoto Univ. 1986), p. 21.Google Scholar