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Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor

Published online by Cambridge University Press:  21 March 2011

H. Tsuchida ,
I. Kamata ,
T. Jikimoto  and
K. Izumi
H. Tsuchida
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
I. Kamata
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
T. Jikimoto
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
K. Izumi
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
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Abstract

Growth of very thick 4H-SiC epilayers up to 215 μm has been demonstrated in a vertical radiant-heating reactor. Surface roughness is maintained as small as ˜0.2 nm even for epilayers over 150 μm in thickness, and a regular step structure without macro step bunching is observed from the very thick epilayers indicating a stable step-flow growth. Photoluminescence and secondary ion mass spectroscopy (SIMS) were performed for a 150 μm-thick epilayer. The Photoluminescence showed strong free excitons and comparatively small nitrogen bound excitons, while aluminum-, boron- and titanium-related lines were almost negligible. The SIMS analysis found no impurities exceeding 1 × 1014 cm−3. The influence of growth parameters on thickness uniformity will also be shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.12
Copyright
Copyright © Materials Research Society 2001

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References

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