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Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration

Published online by Cambridge University Press:  17 March 2011

A. P. Lima ,
C. R. Miskys ,
L. Görgens ,
O. Ambacher ,
A. Wenzel ,
B. Rauschenbach  and
M. Stutzmann
A. P. Lima
Affiliation:
Walter Schottky Institut, Technische Universitét München, Garching, Germany
C. R. Miskys
Affiliation:
Walter Schottky Institut, Technische Universitét München, Garching, Germany
L. Görgens
Affiliation:
Walter Schottky Institut, Technische Universitét München, Garching, Germany
O. Ambacher
Affiliation:
Walter Schottky Institut, Technische Universitét München, Garching, Germany
A. Wenzel
Affiliation:
Institut für Physik, Universitét Augsburg, Augsburg, Germany
B. Rauschenbach
Affiliation:
Institut für Experimentalphysik II, Universitét Leipzig and Institut für Oberflé chenmodifizierung Leipzig, Leipzig, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institut, Technische Universitét München, Garching, Germany
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Abstract

Growth of AlInGaN/GaN heterostructures on sapphire substrates was achieved by plasma induced molecular beam epitaxy. Different alloy compositions were obtained by varying the growth temperature with constant Al, In, Ga and N fluxes. The In content in the alloy, measured by Rutherford Backscattering Spectroscopy, increased from 0.4% to 14.5% when the substrate temperature was decreased from 775 to 665°C. X-Ray reciprocal space maps of asymmetric AlInGaN (2.05) reflexes were used to measure the lattice constants and to verify the lattice match between the quaternary alloy and the GaN buffer layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.45
Copyright
Copyright © Materials Research Society 2001

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References

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