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Growth of Nickel Silicides on Silicon by Short Duration Incoherent Light Exposure

Published online by Cambridge University Press:  22 February 2011

A. Nylandsted Larsen ,
J. Chevallier  and
G. Sørensen
A. Nylandsted Larsen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
J. Chevallier
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
G. Sørensen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
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Abstract

Short duration, incoherent light from a xenon lamp has been used to grow nickel silicides on silicon single crystals from evaporated nickel films. The formation of these silicides was studied by Rutherford Backscattering Spectrometry, channeling, sheet resistivity, and transmission electron microscopy as function of induced temperature (550– 775°C), exposure time (8– 25 sec), and silicon orientation (>111<, >110<, and >100<). Epitaxial NiSi2 films were formed for temperatures above ˜675°C whereas polycrystalline NiSi films were formed below this temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 727
Copyright
Copyright © Materials Research Society 1984

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References

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