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Growth of High Quality InGaN Films by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

J. C. Roberts ,
F. G. McIntosh ,
K. S. Boutros ,
S. M. Bedair ,
M. Moussa ,
E. L. Piner ,
Y. He  and
N. A. El-Masry
J. C. Roberts
Affiliation:
Dept. of ECE, Box 7911, North Carolina State University, Raleigh, N.C. 27695
F. G. McIntosh
Affiliation:
Dept. of ECE, Box 7911, North Carolina State University, Raleigh, N.C. 27695
K. S. Boutros
Affiliation:
Dept. of ECE, Box 7911, North Carolina State University, Raleigh, N.C. 27695
S. M. Bedair
Affiliation:
Dept. of ECE, Box 7911, North Carolina State University, Raleigh, N.C. 27695
M. Moussa
Affiliation:
Air Defense Academy, Alexandria, Egypt
E. L. Piner
Affiliation:
Dept. of MSE, Box 7916, North Carolina State University, Raleigh, N. C. 27695
Y. He
Affiliation:
Dept. of MSE, Box 7916, North Carolina State University, Raleigh, N. C. 27695
N. A. El-Masry
Affiliation:
Dept. of MSE, Box 7916, North Carolina State University, Raleigh, N. C. 27695
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Abstract

InGaN based optical devices can cover from the violet through orange regions of the visible spectrum. Difficulties in the growth of this alloy, which have impeded its applications, include problems such as the high vapor pressure of In, weak In-N bonds and lack of sufficient nitrogen during growth. We report on the MOCVD growth of InxGa1−xN (0 < x < 0.4) on sapphire substrates in the 750 - 800 °C temperature range. X-ray diffraction data show full width at half maximum line widths as narrow as 250 arcsec for low values of x, while films with higher lnN% exhibit broader line widths. Room temperature photoluminescence spectra exhibit band edge emission, with emission from deep levels increasing with x. Preliminary investigations of AlGaN/lnGaN/AlGaN double heterostructures have been conducted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 273
Copyright
Copyright © Materials Research Society 1996

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References

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