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Growth of High Quality c-plane AlN on a-plane Sapphire

Published online by Cambridge University Press:  31 January 2011

Reina Miyagawa ,
Jiejun Wu ,
Hideto Miyake  and
Kazumasa Hiramatsu
Reina Miyagawa
Affiliation:
[email protected], Mie University, Tsu, Japan
Jiejun Wu
Affiliation:
[email protected], Mie University, Tsu, Japan
Hideto Miyake
Affiliation:
[email protected], Mie University, Tsu, Japan
Kazumasa Hiramatsu
Affiliation:
[email protected], Mie University, Tsu, Japan
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Abstract

c-plane (0001) AlN layers were grown on sapphire (11-20) and (0001) substrates by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE), respectively. The growth temperatures were adjusted from 1430-1500 °C and the reactor pressure was kept constant at 30 Torr. Mirror and flat c-plane AlN were obtained grown on both a-plane and c-plane sapphire. Crystalline quality and surface roughness are improved with increasing growth temperature, detected by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM). The Full widths at half maximum (FWHM) values of (10-12) diffraction are 519 and 1219 arcsec for c-plane AlN grown on a-plane sapphire and c-plane sapphire, respectively. It indicates that a-plane sapphire substrate benefits to decrease dislocations density.

Keywords

crystal growthIII-Vvapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-02
Copyright
Copyright © Materials Research Society 2010

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