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Growth of Heteroepitaxial Lead Chalcogenide Infrared Detector Arrays on Fluoride Coveredsilicon Substrates

Published online by Cambridge University Press:  28 February 2011

H. Zogg ,
W. Vogt  and
H. Melchior
H. Zogg
Affiliation:
Swiss Federal Institute of Technology and AFIF, CH–8093 ZUrich, Switzerland
W. Vogt
Affiliation:
Swiss Federal Institute of Technology and AFIF, CH–8093 ZUrich, Switzerland
H. Melchior
Affiliation:
Swiss Federal Institute of Technology and AFIF, CH–8093 ZUrich, Switzerland
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Abstract

Composition graded buffer layers of group Ila fluorides allow the heteroepitaxial growthof device quality narrow gap lead chalcogenides onto Si. Mechanical stresses in the layers are almost completely relaxed at room temperature despite large thermal expansion mismatches. Photovoltaic infrared sensors with up to about 9.5 um cut—off wavelengths and which operate at or near the 300K background noise limit have been fabricated in such PbTe and (Pb,Sn)Se on Si structures.

Furthermore, epitaxial graded fluoride buffers seem to be suited to connect other semiconductors with even large lattice mismatches. Initial heteroepitaxial growth of CdTe on fluoride/Si(lll) substrates (mismatch 20%) supports such more general applications.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 87
Copyright
Copyright © Materials Research Society 1986

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