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Growth of Germanium on Porous Silicon (001)

Published online by Cambridge University Press:  15 February 2011

W. H. Thompson ,
Z. Yamani ,
H. M. Nayfeh ,
M.-A. Hasan ,
J. E. Greene  and
M. H. Nayfeh
W. H. Thompson
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Dlinois USA
Z. Yamani
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Dlinois USA
H. M. Nayfeh
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Dlinois USA
M.-A. Hasan
Affiliation:
C.C. Cameron Applied Research Center and Department of Electrical Engineering, University of North Carolina, Charlotte, NC 28223
J. E. Greene
Affiliation:
Department of Materials Science, Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
M. H. Nayfeh
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Dlinois USA
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Abstract

The surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 255
Copyright
Copyright © Materials Research Society 1997

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Footnotes

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present address: Massachusetts Institute of Technology, Department of Electrical Engineering, Cambridge, MA 02139.

References

REFERENCES

1.Pickering, C., Beale, M.I.J., Robbins, D.J., Pearson, P.J., and Greef, R., J. Phys. C. 17, 6535 (1984).Google Scholar
2.Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
3.Bajor, G., Cadien, K.C., Ray, M.A., Greene, J.E., and Vijaykumar, P.S., Appl. Phys. Lett. 40, 696 (1982).Google Scholar
4.Jung, K.H., Shih, S., Hsieh, T.Y., Kwong, D.L., and Lin, T.L., Appl. Phys. Lett. 59, 3264 (1991).Google Scholar
5.Herino, R., Perio, A., Baria, K., and Bomchil, G., Mater. Letters 2, 519 (1984).Google Scholar
6.Andsager, D.K., Ph.D. thesis, University of Illinois, Department of Physics, Urbana, IL, 1994.Google Scholar
7.Osten, H.J., Phys. Stat. Sol. A145, 235 (1994).Google Scholar
8.LeGoues, F.K., Horn-Von Hoegen, M., Copel, M., and Tromp, R.M., Phys. Rev. B 44, 12894 (1991).Google Scholar
9.Hilliard, J., Andsager, D., AbuHassan, L.H., Nayfeh, H.M., Nayfeh, M.H., J. Appl. Phys. 76, 2423 (1994).Google Scholar
10.Baria, K., Herino, R., Bomchil, G., Pfister, J.C., and Freund, A., J. Cryst. Growth 68, 727 (1984).Google Scholar
11.Koppensteiner, E., Schuh, A., Bauer, G.Holy, V., Bellet, D., and Dolino, G., Appl. Phys. Lett. 65, 1504 (1994).Google Scholar