Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T06:26:09.606Z Has data issue: false hasContentIssue false
  • English
  • Français

The Growth of GaN Films by Migration-Enhanced Epitaxy

Published online by Cambridge University Press:  10 February 2011

S. E. Hooper ,
C. T. Foxon ,
T. S. Cheng ,
N. J. Jeffs ,
G. B. Ren ,
D. E. Lacklison ,
J. W. Orton  and
G. Duggan
S. E. Hooper
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, United Kingdom
C. T. Foxon
Affiliation:
Department of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
T. S. Cheng
Affiliation:
Department of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
N. J. Jeffs
Affiliation:
Department of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
G. B. Ren
Affiliation:
Department of Electrical and Electronic engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
D. E. Lacklison
Affiliation:
Department of Electrical and Electronic engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
J. W. Orton
Affiliation:
Department of Electrical and Electronic engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
G. Duggan
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, United Kingdom
Get access

Abstract

Gallium Nitride epitaxial films were grown by migration enhanced epitaxy directly on sapphire (0001) without using any pre-growth substrate nitridation or low temperature buffer layers. In comparison with our material grown directly on sapphire by conventional molecular beam epitaxy, a significant improvement in the surface morphology and layer properties, measured by reflection high energy electron diffraction, X-ray diffraction, scanning electron microscopy, room temperature photoluminescence and the Hall effect, was observed for material grown by migration enhanced epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 325
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991)Google Scholar
2. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986)Google Scholar
3. Horikoshi, Y., Kawashima, M. and Yamaguchi, H., Jpn. J. Appl. Phys. 27, 169 (1988)Google Scholar
4. Horikoshi, Y. and Kawashima, M., Jpn. J. Appl. Phys. 28, 200 (1989)Google Scholar
5. Horikoshi, Y., Yamaguchi, H., Briones, F. and Kawashima, M., J. Cryst. Growth. 105, 326 (1990)Google Scholar
6. Hooper, S.E., Foxon, C.T., Cheng, T.S., Jenkins, L.C., Lacklison, DE., Orton, J.W., Bestwick, T., Kean, A., Dawson, M. and Duggan, G., Cryst, J.. Growth. 155, 157 (1995)Google Scholar