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Growth of Gallium Nitride Textured Films and Nanowires on Polycrystalline Substrates at sub-Atmospheric Pressures

Published online by Cambridge University Press:  21 March 2011

Hari Chandrasekaran  and
Mahendra K. Sunkara
Hari Chandrasekaran
Affiliation:
Department of Chemical Engineering University of Louisville Louisville, KY 40292
Mahendra K. Sunkara
Affiliation:
Department of Chemical Engineering University of Louisville Louisville, KY 40292
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Abstract

Textured gallium nitride (GaN) films were grown on polished, polycrystalline and amorphous substrates in sub-atmospheric pressures, by direct nitradation of a thin molten gallium films using electron cyclotron resonance (ECR) microwave nitrogen plasma. C-plane texturing was achieved, independent of the substrate crystallinity. Single crystal quality GaN nanowires with diameters ranging from 40-50 nm were also synthesized using direct nitridation of thin gallium films with nitrogen plasma. Scanning electron microscopy (SEM), X-ray Diffraction (XRD), Energy Dispersive Spectroscopy (EDS) and Cross-sectional transmission electron microscopy (CS-TEM), high-resolution TEM (HRTEM) and Micro-Raman spectroscopy were used to characterize the synthesized gallium nitride films and GaN nanowires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.30.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

*

Corresponding Address: [email protected].

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