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Growth of GaAS and InAlAs on High Quality, Epitaxial, NiAl Metal Film

Published online by Cambridge University Press:  21 February 2011

C.-Y. Hung ,
M.V. Weckwerth ,
M.R. Visokay ,
Y.C. Pao  and
J.S. Harris Jr.
C.-Y. Hung
Affiliation:
Solid State Electronic Laboratory, Stanford University, Stanford, CA 94305-4055
M.V. Weckwerth
Affiliation:
Sandia National Laboratory, NM 87185
M.R. Visokay
Affiliation:
Dept. of Materials Science and Eng., Stanford University, Stanford, CA 94305
Y.C. Pao
Affiliation:
Solid State Division, Santa Clara, CA 95054
J.S. Harris Jr.
Affiliation:
Solid State Electronic Laboratory, Stanford University, Stanford, CA 94305-4055
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Abstract

Success in incorporating single crystal, epitaxial metal layers into semiconductors will have a significant impact on electronic and optical devices. The growth of GaAs on (001) pseudomorphic NiAl/GaAs by molecular beam epitaxy has been studied using transmission electron microscopy. The island growth of GaAs on pseudomorphic (lattice matched) NiAl is the origin of the formation of stacking faults and microtwins in the GaAs overlayer. The GaAs islands are considered to be due to heterogeneous nucleation, which occurs more easily at the corner of a step on a strained metal film. Growth of almost twin free In0.25Al0.75As on thick, lattice relaxed, epitaxial NiAl films has been achieved, which supplying useful information for the investigation of the possible factors causing poor quality of GaAs overlayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 537
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCE

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